Material Engineering for Low Power Consumption and Multi-Level Storage in Lateral Phase-Change Memory

Abstract:

The influence of the phase-change materials on the performance of memory devices for low power consumption and multi-level storage was investigated in this work. Doping N into chalcogenide phase-change materials resulted in higher resistivity and low-response to the temperature. The former characteristic leaded to high heating efficiency for phase change via self-heating and thus reduced the power consumption to about 1/20. The latter characteristic enabled easy control of phase change process in the memory device for multi-level storage. 16 distinct resistance levels were demonstrated in our lateral device by adopting a top heater structure

• Periodical: Advanced Materials Research (Volumes 490-495)
• Pages: 3286-3290
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.490-495.3286
• Online since: March 2012
• Authors: You Yin, Rosalena Irma Alip, Yu Long Zhang, Sumio Hosaka
• Keywords: Low Power Consumption, Multilevel Storage, Phase-Change Memory

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