The Growth of Si on SiC Complex Substrate by CVD

Abstract:

In this work, the Si layer is deposited on the SiC complex substrate which is composed of Si(111) substrate and 3C-SiC film grown on it. These Si and 3C–SiC films grown under different temperatures in a chemical vapor deposition system are analyzed. The crystalline orientation, the crystalline quality and the conduction type of the films are measured by X-ray diffraction, Raman scattering ,Scanning electron microscope, and 1150 °C is found the optimized temperature for the epitaxial growth of SiC film grown on the carbonized layer. Measurement results also show that the epitaxial layer is n-type 3C-SiC which has the same crystalline orientation with the Si (111) substrate. Si film grown on the SiC complex substrate under the temperature of 690 °C has the best crystalline quality. This film is composed of p-type monocrystal Si and has the same crystalline orientation with the substrate.

• Periodical: Advanced Materials Research (Volumes 490-495)
• Pages: 3840-3844
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.490-495.3840
• Online since: March 2012
• Authors: W. Cheng, P. Han, F. Yu, L. Yu, L.H. Cheng, H. Lu, Z.L. Xie, X.Q. Xiu, R. Zhang, Y.D. Zheng
• Keywords: CVD, Si/SiC Heterostructure, SiC Complex Substrate

References

[1] M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).

[2] N. Sugii et al., Appl. Phys. Lett. 75 (1999) 2948.

[3] D.K. Nayak et al., Appl. Phys. Lett. 62 (1993) 2853.

[4] T. Tezuka et al., Appl. Phys. Lett. 79 (2001) 1798.

[5] A. Izena et al., J. Cryst. Growth 188 (1998) 131.

[6] J. Pezoldt et al., Phys. Stat. Sol (a) 185 (2001) 159.

[7] C. Yuan et al., Appl. Phys. Lett. 64 (1994) 3000.

[8] Andrew S. Grove 1966 Industrial and Engineering Chemistry 58(7) 48.