Study on Polishing Technology of GaAs Wafer

Abstract:

GaAs are one of the most important semiconductor followed silicon, GaAs wafers are the mostly used substrates for fabricating integrated circuits (ICs). So the quality of ICs depends directly on the quality of GaAs wafers. A series of processes are required to manufacture high quality GaAs wafers. This paper reviews the literature on polishing technology of GaAs wafers, covering the history, summarizes the effects of slurry’s chemical and physical characters such as pH, oxidants, abrasive grit, velocity, and temperature in the polishing process. It also discusses some possible topics for future research.

• Periodical: Advanced Materials Research (Volume 497)
• Pages: 200-204
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.497.200
• Online since: April 2012
• Authors: Qian Fa Deng, Tao Kong, Gan Li, Ju Long Yuan
• Keywords: GaAs Wafer, Polishing, Slurry, Surface Roughness (SR)

References

[1] A.L. Owens, A. Peacock: Nuclear instrument and methods in Physics Research Section A Vol. 531 No. 1 (2004), p.18.

[2] R.H. Jiang S.Z. Xiao: World Nonferrous Metals No. 8(2002), p.7.

[3] C.M. Buttar: Nuclear Insruments and Methods in Physics Research A 395(1997), p.1.

[4] N. Parimon, F. Mustafa, A.M. Hashim: Journal of Materials Science and Engineering Vol. 4 No. 6 (2010), p.60.

[5] J.B. Chen Y.C. Wang G.Q. Dong: Chinese Journal of Rare Metals Vol. 21 No. 2 (1997), p.44.

[6] J.P. Pu, H.J. Zheng, H.J. He, R.Y. Wu: Research & Process of SSE Vol. 17 No. 4 (1997), p.399.

[7] Telford Mark Progress in GaAs manufacturing technology[J]. Ⅲ-Ⅴs Review, 2001, 14(6): 22-26.

[8] K. Wada: Applied Surface Science, Vol. 85 (1995), p.246.

[9] V.C. Venkatesh, I. Inasaki, H.K. Toenshof, et al: Keynote Paper Annals of the CIRP Vol. 44 No. 2(1995), p.611.

[10] H.X. Yang. Research of Polished Technology of VB GaAs wafers [D]. Tianjin University (2009).

[11] Q. Zhao, H.X. Yang, B.J. Li, F. Lü, Y.L. Liu: Process Technique and Materials Vol. 32 No. 11 (2007), p.964.

[12] F. Lü, Y.B. Wang, W.C. Zhang, Y.C. Wu, Q. Zhao: Techmology Column Vol. 34 No. 8 (2001), p.745.

[13] H.X. Yang, F. Lü, Q. Zhao, C.X. Liu: Semiconductor Information Vol. 38 No. 5 (2001), p.55.

[14] H.X. Yang, F. Lü, Q. Zhao, C.X. Liu: Journal of CAEIT Vol. 2 No. 5 (2007), p.527.

[15] F. Zhang, A. AHMED, G. AHMADI, et al: Journal of the Electrochemical Society Vol. 10 (1999), p.2.

[16] Y. Chen, X.Z. Li, Z.G. Chen, A.L. Chen: Research & Progress OFSSE RESEARCH﹠PROGRESS OFSSE Vol. 26 No. 4 (2006), p.555.

[17] X. Lü, W. Yu: Lubrication Engineering Vol. 34 No. 4 (2009), p.74.

[18] V.K. SHAHA: Development of a new generation polyurethane polishing pad used in chemical mechanical planarization of microelectronic materials[D]. USA, University of Massachusettles Lowell (2002).