The Simulation Study of Si3N4 Ceramics Nano-Cutting Process

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Abstract:

Silicon nitride nanoscale cutting model was established by molecular dynamics simulation, and interactions force between atoms of work-piece was calculated by Tersoff potential function. Through the three-dimensional simulation of silicon nitride nanocutting process, the changes of cutting force, kinetic energy and potential energy in the nanoscale cutting process, and the effects of cutting thickness and cutting speed on the entire cutting process were analyzed. The results showed that the kinetic energy, potential energy and cuting force increased along with the cutting thickness increasing, both kinetic energy and potential energy decreased with cutting speed increasing.

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371-376

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April 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] X. S. Han, B. Lin and S. Y. Yu. Journal of Materials Processing Technology, 2002(129): 105-108.

Google Scholar

[2] Xichun Luo, Yingchun Liang, Shen Dong. Tool technology, 2000, 34 (4): 3-7.

Google Scholar

[3] Yulan Tang, Yingchun Liang, Dongxu Wang et al. Key Engineering Materials 2006, 315-316: 792-795.

Google Scholar

[4] Xichun Luo, Yingchun Liang, Shen Dong, et al. Aviation Precision Manufacturing Technology, 2000, 36(3): 21-24.

Google Scholar

[5] J. Tersoff. Physical Review Letters, 1986, 56: 632-635.

Google Scholar

[6] J. Tersoff. Physics Review, 1989, B39: 5566-5568.

Google Scholar

[7] Guozhi Liu, Ke Zhang, Yulan Tang, Hong Sun, Haiyan Gao. Advanced Materials Research Vols. 189-193 (2011) pp.3097-3102.

Google Scholar