Study on Micro-Structure of Al-Doped ZnO Thin Films

Jun Yao Ye; Su Li Wang

doi:10.4028/www.scientific.net/AMR.512-515.1730

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 512-515Study on Micro-Structure of Al-Doped ZnO Thin...

Study on Micro-Structure of Al-Doped ZnO Thin Films

Abstract:

Al-doped ZnO thin films（ZnO:Al）were prepared by sol-gel process, the influence of preparation parameters on micro-structure was studied by XRD. The results showed that the solution concentration of 0.65mol/L was multi-axis orientation and when the concentration reached 0.8mol/L the film showed c-axis preferred growth; when film was too thin, showing amorphous, with the film thickness increased, ZnO:Al film turned multi-axis orientation to (002) plane preferential growth; the grain could not get enough energy to move to the right place for crystal when annealing temperature was too low, with the annealing temperature increased, ZnO:Al turned from multi-axis orientation to c-axis preferred orientation.

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Periodical:

Advanced Materials Research (Volumes 512-515)

Pages:

1730-1733

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.512-515.1730

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Online since:

May 2012

Authors:

Jun Yao Ye, Su Li Wang

Keywords:

Al-Doped ZnO Thin Films, Annealing Temperature, Film Thickness, Microstructure, Solution Concentration

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