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Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering

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Abstract:

Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

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Periodical:

Advanced Materials Research (Volumes 538-541)

Pages:

154-157

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.538-541.154

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Online since:

June 2012

Authors:

Peng Juan Liu, Ping Fan, Zhuang Hao Zheng, Dong Ping Zhang, Xing Min Cai, Zhao Kun Cai, Tian Bao Chen

Keywords:

Annealing, Ion Beam Sputtering, Thermoelectric Thin Film, Zinc Antimony

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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