Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a New {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth

Li Zhu Zhang; Fu Zhong Wang

doi:10.4028/www.scientific.net/AMR.548.345

Paper Titles

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The Effect of Substituting of Al on the Curie Temprature and Magneto-Resistance of Double Perovskite Compounds
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Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a New {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth
p.345

Simulation and Optimization on the Process of Acetic Acid Dehydration via Extraction Combined with Azeotropic Distillation
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Numerical Study of Plastic Strains on Slope Instability
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Thin-Film Residual Stress Detection Method Based on Flexible Hinges
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 548Atomic Scale Kinetic Monte Carlo (KMC) Simulation...

Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a New {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth

Abstract:

The growth of {111}-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperature (1100K-1400K), CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.005%-0.3%). The results showed that: Substrate temperature (Ts), the concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate and surface roughness.

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Advanced Materials Research (Volume 548)

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345-348

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https://doi.org/10.4028/www.scientific.net/AMR.548.345

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July 2012

Authors:

Li Zhu Zhang, Fu Zhong Wang

Keywords:

Atomic Scale Simulation, Chemical Vapor Deposition Diamond Film, Kinetic Monte Carlo Method

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