Structural Optimization of the GaAs-Based Resonant Tunneling Diodes

Bin Zhen Zhang; Hao Guo; Jun Tang; Jun Liu; Jie Wang

doi:10.4028/www.scientific.net/AMR.614-615.1179

Paper Titles

On-Line Condition Monitoring for Power Transformers Based on UHF PD Measurements
p.1158

Temperature Dependence of on-Line DGA Results for Transformers through Membrane Extraction
p.1163

A Novel Overhead Ground Wire with Winded Insulated Conductors for Ice-Melting
p.1168

Study of New Dampers for Application to Overhead Transmission Lines Groundwires
p.1172

Structural Optimization of the GaAs-Based Resonant Tunneling Diodes
p.1179

Direct Torque Control for Brushless Doubly-Fed Machine Based on Fuzzy-PI Regulator
p.1185

New Implementation of Position Sensorless Control Based on the AC Component of SNP for Brushless DC Motor
p.1190

Sliding Mode Control with a New-Style Disturbance Observer for Low-Speed Permanent Magnet Synchronous Motor
p.1195

Research of the Undervoltage Tripper with Overvoltage Protection Function
p.1201

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 614-615Structural Optimization of the GaAs-Based Resonant...

Structural Optimization of the GaAs-Based Resonant Tunneling Diodes

Abstract:

Structural optimization for the highly sensitive mechanical sensor elements was studied. Using Molecular Beam Epitaxy (MBE) technology, three different RTD structures were fabricated on the GaAs substrates. From the I-V characterizations, it can be concluded that, the PVCR of the best design is up to 6, VP is reduced to 0.41V, and then we analyzed the relationship between the device material structure and I-V characteristics, providing a reference for the better performance of RTD structure design.