Electrical and Optical Characterization of Mg Doping in GaN

E. Azimah; Norzaini Zainal; Hassan Zainuriah; Ahmad Shuhaimi Abu Bakar; Azlan Bahrin

doi:10.4028/www.scientific.net/AMR.620.453

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Electrical and Optical Characterization of Mg Doping in GaN
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 620Electrical and Optical Characterization of Mg...

Electrical and Optical Characterization of Mg Doping in GaN

Abstract:

Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.