Response Spectrum 0.9-2.65 μm of In_0.82Ga_0.18As Detectors by Two-Step Growth Technique

Abstract:

InP/In_0.82Ga_0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn, TMGa, AsH₃, and PH₃ as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power, their temperatures were detected by a thermocouple, and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In_0.82Ga_0.18As buffer with the thickness of 100 nm, In0.82Ga0.18As absorption layer with the thickness of 2.8 μm, and the InP cap with the thickness of 0.8 μm. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In_0.82Ga_0.18As detector were studied, the curves of the I-V characteristics, the range of response spectrum, and the detectivity (D*) were obtained.

• Periodical: Advanced Materials Research (Volume 629)
• Pages: 209-213
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.629.209
• Online since: December 2012
• Authors: Tie Min Zhang, Guo Qing Miao, Jun Fu, Dong Mei Ban, Zhen Jiang Shen, Hong Lin, Xu Zou, Hong Yan Peng
• Keywords: Detecter, In_0.82Ga_0.18As, MOCVD

References

[1] H. Nagai, Y. Noguchi, Appl. Phys. Lett. 1976; 29: 740.

[2] S. Bandy, C. Nishimoto, S. Hyder, C. Hooper, Appl. Phys. Lett. 1981; 38: 817.

[3] S.L. Murray, F.D. Newman, C.S. Murray, D.M. Wilt, M.W. Wanlass, P. Ahrenkiel, R. Messham, R.R. Siergiej, Semicond. Sci. Tech. 2003; 18: s202.

DOI: 10.1088/0268-1242/18/5/309

[4] K.J. Bachmann, J.L. Shay, Appl. Phys. Lett. 1978; 32: 446.

[5] R.W.M. Hoogeveen, R.J. van der A, A.P.H. Goede, Infrared Phys. Techn. 2001; 42: 1.

[6] S. Durel, J. Caulet, M. Gauneau, B. Lambert, A. Le Corre, A. Poudoulec, D. Lecrosnier, 1990 Second International Conference on Indium Phosphide and Related Materials, pp.139-143.

DOI: 10.1109/iciprm.1990.203004

[7] Y.G. Chai and R. Chow, J Appl. Phys. 1982; 53: 1229.

[8] M. Wada and H. Hosomatsu, Appl. Phys. Lett. 1994; 64: 1265.

[9] H.J. Ko, Y.F. Chen, J.M. Ko, T. Hanada, Z. Zhu, T. Fukuda, T. Yao, J. Cryst. Growth, 1999; 207: 87.

[10] T. Zhang, G. Miao, Y. Jin, J. Xie, H. Jiang, Z. Li, H. Song, Microelectron. J. 2007; 38: 398.

[11] T. Zhang, G. Miao, Y. Jin, H. Jiang, Z. Li, H. Song, J. Alloy. Compd. 2008; 458: 363.

[12] T. Zhang, G. Miao, Y. Jin, S. Yu, H. Jiang, Z. Li, H. Song, J. Alloy. Compd. 2009; 472: 587.

[13] W. Gao, P.R. Berger, M.H. Ervin, J. Pamulapati, R.T. Lareau, S. Schauer, J. Appl. Phys. 1996; 80: 7094.

[14] T. Zhang, G. Miao, Y. Jin, S. Yu, H. Jiang, Z. Li, H. Song, Materials Science in Semiconductor Processing, 2009; 12: 156.

[15] R.U. Martinelli and G.H. Olsen, J. Appl. Phys. 1976; 47: 1332.