Electrical Properties of Pt Nanowires Deposited with Focused Ion Beam

Abstract:

Focused ion beam (FIB) is an important tool in microfabrication technique. In recent years, FIB was used to fabricate the nanodevices. In this paper, Pt nanowires with differ radius were deposited with FIB. The component and resistance of nanowires were investigated. Results indicate that the component of Pt naowires is mainly Pt, C and Ga. The high content of Pt in nanowires is 49.36%. The resistivity of Pt nanowire is from 545.74µΩ•cm to 5.16µΩ•cm. Pt nanowires with the diameter up to 60nm take on characteristic of metal; others take on that of semiconductor.

• Periodical: Advanced Materials Research (Volumes 652-654)
• Pages: 339-343
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.652-654.339
• Online since: January 2013
• Authors: Yong Jun Ma
• Keywords: Component, Electrical Properties, Focused Ion Beam (FIB), Pt Nanowire

References

[1] John Meingaills, J. Vac. Sci. Technol. B, 1987, 5(2): 469-495.

[2] Ehrenfried Zschech, Eckhard Langer, Hans Juergen Engelmann, et al, Materials Science in Semiconductor Processing, 2003, (5): 4572464.

[3] R.M. Langford, A.K. Perford-Long, M. Rommeswinkle, et al, Mater. Sci. Technol. 2002, 18: 743.

[4] K. Gamo, N. Takakura, N. Samoto, et al, Jpn.J. Appl. Phys, 1984, 23: L293.

[5] Jiang Suhua, Tang Ling, Wang Jia ji, Chinese journal of semiconductors, 2004, 25(11): 1458-1463(in Chinese).

[6] Park Y K, N agai T, TakaiM, et al. Nucl Instum Methods Phys Res B, 1999, 148: 25.

[7] ShoheiN akahara, Surfaceand Coatings Technology, 2003, (1692170): 7212727.

[8] L. A. Giannuzzi, F. A. Stevie, Micron, 1999, (30): 1972204.

[9] M. W. Phaneuf, Micron, 1999, (30): 2772288.

[10] T. Tao, J.S. Ro, J. Melngailis, et al, J. Vac. Sci. Technol. B 1990, 8: 1826.

[11] T.W. Ebbesen, H.J. Lezec, H. Hiura, et al, Nature, 1996, 382: 54.

[12] Stephen B Cronin, Yu-Ming Lin, Oded Rabin, et al, Nanotechnology 2002, 13, 653–658.

[13] Yong-Jun Ma, Feng Zhou, Li Lu, et al, Nanotechnology, 2005, 16: 746-749.

[14] Francisco Hernandez-ramirez, Albert Tarancon, Olgacasals, et al, Nanotechnology 2006, 17: 5577-5583.

[15] Yong-Jun Ma, Feng Zhou, Li Lu, et al, Solid State Communications, 2004, 130: 313–316.

[16] Yunze Long, Zhaojia Chen, Yongjun Ma, et al, Appl. Phys. Lett. 2004, 84: 2205.

[17] Yunze Long, Zhaojia Chen, Nanlin Wang, et al, Appl. Phys. Lett. 2003, 83: 1863.

[18] M.S.H. Go, Focused Ion Beam fabrication of junctions in the Charge Density Wave Conductor NbSe3. TU-Delft, (2001).

[19] J. -F. Lin, J.P. Birda, L. Rotkinab, Physica E 2003, 19: 112 – 116.

[20] J. -F. Lin, J.P. Bird, L. Rotkina, et al, Appl. Phys. Lett. 2003, 82: 802.

[21] N.F. Mott and E.A. David, Electronic Processes in Noncrystalline Materials (Oxford University Press, Oxford, (1979).

[22] B.I. Shklovskii and A.L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1979).

[23] J.M. Luttinger. J. Math. Phys. 1963, 4: 1154.

[24] R. Egger, A. Bachtold, M.S. Fuhrer, et al, Lecture Notes in Physics, 2001, 579: 125-146.

[25] Latha Venkataraman, Charles M. Lieber, Phys. Rev. Lett. 1999, 83: 5334–5337.

[26] S.V. Zeitsev-Zotov, Yu.A. Kumzerov, Yu.A. Firsov, P. Monceau, J. Phys.: Condens. Matter 12, L303 (2000).

DOI: 10.1088/0953-8984/12/20/101