High Performance Ka-Band InAlN/GaN/AlGaN HFET on SiC

Xiao Wei Zhang; Ke Jin Jia; Yv Long Fang; Shao Bo Dun; Zhi Hong Feng; Heng Ping Zhao

doi:10.4028/www.scientific.net/AMR.662.284

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High Performance Ka-Band InAlN/GaN/AlGaN HFET on SiC
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 662High Performance Ka-Band InAlN/GaN/AlGaN HFET on...

High Performance Ka-Band InAlN/GaN/AlGaN HFET on SiC

Abstract:

Ka-band radio-frequency(RF) performance of a InAlN/GaN/AlGaN HFET on SiC was reported. Based on a detailed delay analysis,a maximum drain current density of 1.12 A/mm was obtained. Power measurements were performed, the maximum output power density is 2.1 W/mm and a power-added efficiency (PAE) is 22.3% at 29 GHz. The current gain cut-off frequency (fT) is 60 GHz, and the power gain cut-off frequency (fMAX) is 105 GHz.

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Periodical:

Advanced Materials Research (Volume 662)

Pages:

284-287

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.662.284

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Online since:

February 2013

Authors:

Xiao Wei Zhang, Ke Jin Jia, Yv Long Fang, Shao Bo Dun, Zhi Hong Feng, Heng Ping Zhao

Keywords:

Current Gain Cut-Off Frequency, InAln/GaN/AlGaN HFET, Output Power Density, Power-Added Efficiency

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