Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

Abstract:

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

• Periodical: Advanced Materials Research (Volume 667)
• Pages: 180-185
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.667.180
• Online since: March 2013
• Authors: M. Ain Zubaidah, Mohd Husairi Fadzilah Suhaimi, S.F.M. Yusop, Noor Asli Asnida, Mohamad Rusop, Saifollah Abdullah
• Keywords: Electroluminescence, Photoluminescence (PL), Porous Silicon Nanostructures

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