Synthesis of β-Silicon Carbide Nanowires by a Simple, Catalyst-Free Carbo-Thermal Evaporation Technique

Majid S.  Al-Ruqeishi; Roslan Md Nor; Yusoff Mohd Amin; Khalifa Al-Azri

doi:10.4028/www.scientific.net/AMR.667.231

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 667Synthesis of β-Silicon Carbide Nanowires by a...

Synthesis of β-Silicon Carbide Nanowires by a Simple, Catalyst-Free Carbo-Thermal Evaporation Technique

Abstract:

β-SiC nanowires were successfully fabricated on pare Si (100) substrate using simple carbo-thermal evaporation of graphite at 1200°C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 to 500 nm. The majority of crystal planes were β-SiC (111) with other less intensity of (200), (220) and (311). The silicon substrate location inside the furnace found to be critical in the formation of the β-SiC nanowires. Also, FTIR absorption peaks for β-SiC nanowires found at higher frequency side of 1110 cm-1 which is pointed to Si–O asymmetric stretching mode.

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Advanced Materials Research (Volume 667)

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231-239

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.667.231

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Online since:

March 2013

Authors:

Majid S. Al-Ruqeishi, Roslan Md Nor, Yusoff Mohd Amin, Khalifa Al-Azri

Keywords:

Carbo-Thermal Evaporation, β-SiC Nanowires

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