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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 669The Preparation of the Highly Preferred...

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

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Abstract:

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

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Periodical:

Advanced Materials Research (Volume 669)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.669.181

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Online since:

March 2013

Authors:

Nan Ding, Li Ming Xu, Bao Jia Wu, Guang Rui Gu

Keywords:

AlN Film, Magnetron Sputtering, Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD), ZnO Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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