Deposition of CdSe Films by Pulsed Galvanostatic Electrodeposition and their Properties

Abstract:

Cadmium Selenide (CdSe) thin films were pulse electrodeposited at room temperature and at different duty cycles in the range of 6 – 50 % at a current density of 100 mA cm-2. XRD patterns of films deposited at different duty cycles exhibit the cubic structure. The peak widths decreased with increase of duty cycle. The crystallite size increased from 8 to 20 nm. Microstructural parameters like dislocation density and strain were calculated. The transmission spectra exhibit interference fringes. Refractive index calculated by the envelope method varied in the range of 2.5 to 3.3.The optical band gap increased from 1.84 eV to 2.06 eV with increase of duty cycle.

• Periodical: Advanced Materials Research (Volume 678)
• Pages: 144-148
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.678.144
• Online since: March 2013
• Authors: Kalimuthu Ananthi, Swaminathan Dhanpandian, Natarajan Muthukumarasamy, Kaliannan Thilagavathy, Venkatapathy Chitra
• Keywords: Electro-Deposition, Semiconductor, Thin Film

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