Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films

Rangasamy Balasundraprabhu; N. Muthukumarasamy; E.V. Monakhov; B.G. Svensson

doi:10.4028/www.scientific.net/AMR.678.140

Paper Titles

Structural and Optical Characterization of Chemically Deposited Cuprous Oxide (Cu₂O) Thin Film
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Structural and Optical Properties of Thermally Evaporated BiSb₂S₃ Thin Films
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Structural and Optical Properties of Thermally Evaporated CdTe Film
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Structural Properties of PbS Nanoparticles Prepared by Photo Chemical Synthesis
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Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films
p.140

Deposition of CdSe Films by Pulsed Galvanostatic Electrodeposition and their Properties
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Deposition and Characterization of Nanocrystalline Al₂O₃ Thin Films by DC Reactive Magnetron Sputtering
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Analysis of the Effect of Temparature on the Resistivity of Nanocrystalline La_0.7 Ba_0.3MnO₃ Powders
p.154

Structural and Optical Characteristics of Ni Doped ZnS Nanoparticles
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 678Structural, Optical and Morphological Studies on...

Structural, Optical and Morphological Studies on Nanostructure ITO Thin Films

Abstract:

Indium tin oxide (ITO) thin films exhibiting good transmittance and conductivity suitable for solar cell applications have been prepared on Si(100) and fused silica substrates by optimizing the dc sputtering parameters such as power density and Ar partial pressure. Structural analysis of the as-deposited and annealed ITO films indicated that the as-deposited films are predominantly amorphous, whereas the films annealed at 200–400 °C are found to be of polycrystalline nature exhibiting dominant peaks corresponding to the (222) and (400) planes. The optical transmittance and band gap values of the films are observed to exhibit a change on annealing. From the ellipsometry studies on ITO/Si annealed at 300°C, it is found that graded layer consist of the mixing of two ITO materials with slightly different optical constants and the grading is almost linear. The resistivity of the ITO films is found to decrease with annealing temperature, correlating with the improvement in the crystal quality, and values in the range of 2-3 x10-4 Ω-cm are observed for the films annealed at 300°C. Surface topography study of the films has been performed using atomic force microscope(AFM) and the results are discussed.