Paper Titles

Morphologies of P3HT and P3HT/PCBM Thin Films Prepared by Drop Casting and Spin Coating
p.3

A Highly Selective Chemosensor Probe for Ag⁺ in 50% THF/H₂O
p.7

Alloying Element Ta Effect on Microstructure of Co-Al-W Superalloy by Vacuum Arc Melting
p.10

Mechanical Properties Analysis of TiN/TiAlN Coatings after Annealing
p.14

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition
p.20

Thermodynamic Analysis and Observation of Inclusions in RE-Austenitic Stainless Steel
p.25

Effect of Rare Earth on the Inclusions and Pitting Resistance of Austenitic Stainless Steel
p.29

Effects of RE on Inclusions and Mechanical Properties of H13 Die Steel
p.33

Stable Structures of Donor-Acceptor-Donor Trimer Codopants in 4H-SiC
p.37

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 718-720Growth of Highly C-Axis Oriented AlN Films at...

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

Article Preview

Abstract:

In this work, the aluminum nitride (AlN) thin film with highly c-axis orientation was prepared successfully at water cooling condition by RF sputtering. The influence of water cooling on the crystalline quality of AlN thin film is researched. The crystalline characteristics and microstructure of AlN thin films deposited on Si (111) and Mo/Si (111) were researched by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). The results indicated that highly c-axis AlN films can be synthetized at water cooling condition. The AlN film deposited on Mo thin film is titled to the surface, when that is perpendicular to the silicon substrate. Different models are proposed to explain the growth behaviors of AlN thin films on the two kinds of substrates.

You might also be interested in these eBooks

Advanced Measurement and Test III

Info:

Periodical:

Advanced Materials Research (Volumes 718-720)

Pages:

20-24

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.718-720.20

Citation:

Cite this paper

Online since:

July 2013

Authors:

J. Yang, X.Q. Jiao, R. Zhang, H. Zhong, Y. Shi, B. Du

Keywords:

Aluminum Nitride (AlN), C-Axis, Sputtering, Thin Film, Water Cooling

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Rodríguez-Madrid JG, Iriarte GF, Araujo D, Villar MP, Williams OA, Müller-Sebert W, Calle F, Mater Lett. 66 (2012) 339-42.

DOI: 10.1016/j.matlet.2011.09.003

[2] García-Gancedo L, Zhu Z, Iborra E, Clement M, Olivares J, Flewitt AJ, Milne WI, Ashley GM, Luo JK, Zhao XB, Lu JR, Sens Actuators, B. 160 (2011) 1386-93.

DOI: 10.1016/j.snb.2011.09.083

[3] Marauska S, Dankwort T, Quenzer HJ, Wagner B. Procedia Engineering. 25 (2011) 1341-4.

[4] Xiong J, Gu H-s, Hu K, Hu M-z. Int J Miner Metall Mater. 17 (2010) 98-103.

[5] R. N. Tait and A. Mirfazli, J Vac Sci Technol, A. 19 (2001) 1586-90.

[6] C. Caliendo, P. Imperatori, E. Cianci, Thin Solid Films. 441 (2003) 32-7.

[7] F. Medjani, R. Sanjinés, G. Allidi and A. Karimi, Thin Solid Films. 515 (2006) 260-5.

DOI: 10.1016/j.tsf.2005.12.145

[8] J. P. Kar, G. Bose and S. Tuli, Curr Appl Phys. 6 (2006) 873-6.

[9] Seo H-C, Petrov I, Kim K. Journal of Electronic Materials. 39 (2010) 1146-51.

[10] Akiyama M, Kamohara T, Kano K, Teshigahara A, Kawahara N. Appl Phys Lett. 93 (2008) 021903-3.

DOI: 10.1063/1.2957654

[11] Auner GW, Jin F, Naik VM, Naik R. J Appl Phys. 85 (1999) 7879-83.

[12] Kok-Wan T, Long W, Cheng-Liang H, Meng-Shan L. Ultrasonics, 2003. IEEE Symposium on, pp.2024-7, 2003.

[13] Jang HW, Kang HC, Noh DY, Yi MS. J Appl Phys. 94 (2003) 2957-61.

[14] Martin F, Jan ME, Belgacem B, Dubois MA, Muralt P. Thin Solid Films. 514 (2006) 341-3.

[15] Lee J-B, Jung J-P, Lee M-H, Park J-S. Thin Solid Films. 447–448 (2004) 610-4.

[16] Deniz D, Karabacak T, Harper JME. J Appl Phys. 103 (2008) 083553-4.