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Reliability Research of Capacitive RF-MEMS Switch
Abstract:
This paper presents the model of capacitive RF-MEMS switch for the lifetime prediction. The model is based on dielectric charging failure mechanism. The simulation results show that lifetime can reach 1000 hours when elastic coefficient (K) adopts 4-16N/m, Si3N4 as dielectric material, 0.4-1μm of dielectric thickness, 2-5μm of plate distance, less than 20V of driven voltage.
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2507-2510
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Online since:
August 2013
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© 2013 Trans Tech Publications Ltd. All Rights Reserved
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