Reliability Research of Capacitive RF-MEMS Switch

Article Preview

Abstract:

This paper presents the model of capacitive RF-MEMS switch for the lifetime prediction. The model is based on dielectric charging failure mechanism. The simulation results show that lifetime can reach 1000 hours when elastic coefficient (K) adopts 4-16N/m, Si3N4 as dielectric material, 0.4-1μm of dielectric thickness, 2-5μm of plate distance, less than 20V of driven voltage.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 753-755)

Pages:

2507-2510

Citation:

Online since:

August 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] ISRAELACHVILI J N. Intermolecular and surface forces, Academic Press, London, U. K. (2010).

Google Scholar

[2] WIVVELER J, PFEIFER G, HIETSCHOLD M. Parasitic charging of dielectric surfaces in capacitive micro electro mechanical systems (MEMS), Sensors and Actuators. 2008, A71: 74-80.

DOI: 10.1016/s0924-4247(98)00155-1

Google Scholar

[3] BARBER J R, CIAVARELLA M. Contact mechanics. International Journal of Solids and Structures, 2011, 37: 29-43.

Google Scholar

[4] MAJUMDAR A, TIEN C L. Fractal characterization and simulation of rough surfaces. Wear. 2009. 136: 313-327.

DOI: 10.1016/0043-1648(90)90154-3

Google Scholar