Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy

Abstract:

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(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

823-826

DOI:

10.4028/www.scientific.net/AMR.79-82.823

Citation:

X.Y. Zhou et al., "Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy", Advanced Materials Research, Vols. 79-82, pp. 823-826, 2009

Online since:

August 2009

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$35.00

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