A Thin Silicon Wafer Thickness Measurement System by Optical Reflectmetry Scheme Using Fourier Transform Near-Infrared Spectrometer

Teppei Onuki; Ryusuke Ono; Akira Suzuki; Hirotaka Ojima; Jun Shimizu; Li Bo Zhou

doi:10.4028/www.scientific.net/AMR.797.549

Paper Titles

Effect of Contact Stiffness of Grinding Wheel on Ground Surface Roughness and Residual Stock Removal of Workpiece
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Analysis on Wear of Self-Sharpening Fine Super-Hard Abrasive Tool
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Heat Pipe Grinding Wheel in Grinding Titanium Alloy Ti-6Al-4V
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Development of CMM Auxiliary Equipment for Tiny Hole Measuring
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A Thin Silicon Wafer Thickness Measurement System by Optical Reflectmetry Scheme Using Fourier Transform Near-Infrared Spectrometer
p.549

Review on Multi-Point Method for Roundness Error Separation
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Development of a Measuring Equipment for Silicon Wafer Warp
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Research on Iso-Scallop Method for NC Grinding of the Special Rotating Workpiece
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Mathematical Modeling and Parametric Design of Taper End Mills
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 797A Thin Silicon Wafer Thickness Measurement System...

A Thin Silicon Wafer Thickness Measurement System by Optical Reflectmetry Scheme Using Fourier Transform Near-Infrared Spectrometer

Abstract:

In this study, measurable thickness range was improved by re-customized components of the thickness measurement system using the method of Fabry-Perot interference signature analyzing. A Fourier transform near infrared (FT-NIR) spectrometer with indium gallium arsenide was used in the developed system. As a result of the sensitiveness in the whole near infrared band and high spectral resolution united with high signal noise ratio of the FT-NIR spectrometer, the maximum measurable thickness is improved to 88μm while sub-micron order of the minimum measurable thickness is also improved.

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Periodical:

Advanced Materials Research (Volume 797)

Pages:

549-554

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.797.549

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Online since:

September 2013

Authors:

Teppei Onuki, Ryusuke Ono, Akira Suzuki, Hirotaka Ojima, Jun Shimizu, Li Bo Zhou

Keywords:

Backside Grinding, Ft-NIR, Ultra Thin Wafer, Wafer Thickness Meter

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References

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DOI: 10.4028/www.scientific.net/amr.325.672

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