Study on Optical and Electronic Properties of Sn-Doped ZnPc

Abstract:

Sn doped ZnPc films were deposited on intrinsic Si and glass substrates by organic source thermal co-evaporation technique with different deposition rates. Optical properties and electronic structure were characterized by UV-Vis spectroscopy and X-ray photoelectron spectroscopy (XPS) respectively. The UV-Vis results showed that phase transition of ZnPc from α-phase to β-phase occurred when Sn:ZnPc deposition rate is 0.3:0.7 or higher. XPS results indicated that the outer s electron of Sn atom is transferred to the ZnPc. Broadening of the C 1s spectra is observed with the increasing of Sn deposition rate. This broadening corresponds to the change of molecular environment surrounding carbon atoms in the Sn-doped ZnPc films.

• Periodical: Advanced Materials Research (Volume 802)
• Pages: 204-208
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.802.204
• Online since: September 2013
• Authors: Adirek Rangkasikorn, Chaloempol Saributr, Sunit Rojanasuwan, Narin Tammarugwattana, Kitipong Mano, Pitiporn Thanomngam, Jiti Nukeaw
• Keywords: Phasetransition, Thermal Evaporation Technique, X-Ray Photoelectron Spectroscopy, Zn-Phthalocyanine

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