Design of a Sub-0.4 V Reference Circuit in 0.18μm CMOS Technology

Sonal Singhal; Rohit Singh; Amit Kumar Singh

doi:10.4028/www.scientific.net/AMR.816-817.882

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 816-817Design of a Sub-0.4 V Reference Circuit in 0.18μm...

Design of a Sub-0.4 V Reference Circuit in 0.18μm CMOS Technology

Abstract:

This paper proposes a low power voltage reference generator in 0.18μm CMOS technology.The circuit presented here includes MOSFETs in sub threshold mode and uses the temperature dependence of threshold voltages and sub-threshold current of MOSFET to form a temperature-insensitive reference. An input supply voltage of 1.8 Volt is used for the circuit generating a total current of 1.33μA. By varying the device temperature over the range of-20°C to 100°C corresponding variation over the output voltage was found to lie in the range 397.8 to 400.2 mV. Thus a 0.6% variation in voltage over the considered range of temperature is obtained.

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Periodical:

Advanced Materials Research (Volumes 816-817)

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882-886

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.816-817.882

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Online since:

September 2013

Authors:

Sonal Singhal, Rohit Singh, Amit Kumar Singh

Keywords:

Reference Generator, Sub-Threshold Operation, Temperature Coefficient

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