Growth of ZnO Nanosturctures on Porous Silicon in Different Concentration of Zn²⁺ Ion

Abstract:

In this work, zinc nitrate was used as starting materials while hexamethylenetetramine as stabilizier and deionized water as a solvent. Electrochemical etching method was employed to modify p-type silicon wafer surface in substrate preparation. ZnO nanostructures were simply deposited on substrate by sol-gel immersion method. Different molarities of precursor were prepared to study the effect of Zn²⁺ ion concentration in growth of ZnO nanostructures. Field Emission Scanning Electron Microscopic (FESEM) revealed that concentration of Zn²⁺ ion precursor influences the growth of ZnO nanostructures. ZnO nanoflower was formed in low molarity and becomes nanospherical composed by nanorods in high molarity. X-Ray diffraction (XRD) spectroscopy was employed to analyse the structural properties. The result was confirming the formation of hexagonal wurtzite of ZnO nanostructures. Besides, the growth of ZnO nanostructures was aligned to (002) towards higher molarity.

• Periodical: Advanced Materials Research (Volume 832)
• Pages: 691-694
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.832.691
• Online since: November 2013
• Authors: Kevin Alvin Eswar, Mohd Husairi Fadzilah Suhaimi, Azlinda Ab Aziz, Mohamad Rusop, Saifollah Abdullah
• Keywords: Electrochemical Etching, Nanoflower, Nanospherical, Porous Silicon, Sol-Gel Immersion, Zn²⁺ Concentrations

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