Electrical Characterization and Microstructures of Bi4-xTmxTi3O12 Ceramics

Bei Li; X.H. Yuan; M. Chen; X.A. Mei

doi:10.4028/www.scientific.net/AMR.833.17

Paper Titles

Preface

First-Principles Study of Polarization Behavior in BaTiO₃/PbTiO₃ Ferroelectric Superlattices
p.3

Phase Structure of Nanocrystalline BaTiO₃ Powders via One-Step Solvothermal Route
p.8

Electrical Characterization and Microstructures of Bi_4-x Ho_xTi₃O₁₂ Ceramics
p.13

Electrical Characterization and Microstructures of Bi_4-xTm_xTi₃O₁₂ Ceramics
p.17

Ferroelectric Characterization and Microstructures of Bi_4-xLu_xTi₃O₁₂ Ceramics
p.21

Electrical Characterization and Microstructures of Bi_4-xSc_xTi₃O₁₂ Ceramics Grown by Electroceramic Technique
p.25

Large Remanent Polarization of Bi₄Ti₃O₁₂ Films by Ho³⁺ Substitution
p.29

Ferroelectric Properties and Microstructures of Bi_4-x Lu_xTi₃O₁₂ Thin Films
p.33

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 833Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_4-xTm_xTi₃O₁₂ Ceramics

Abstract:

Tm-doped bismuth titanate (Bi_4-xTm_xTi₃O₁₂: BTT) and pure Bi₄Ti₃O₁₂ (BIT) ceramics with random orientation were fabricated by a conventional electroceramic technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. Tm-doping into BIT caused a large shift of the Curie temperature ( T_C ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Tm doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BTT ceramic with x=0.75 were 16 μC/cm2 and 75 kV/cm, respectively.

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Advanced Materials Research (Volume 833)

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17-20

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.833.17

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Online since:

November 2013

Authors:

Bei Li, X.H. Yuan, M. Chen, X.A. Mei

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Bismuth Titanate, Ceramic, Dielectric, Ferroelectric

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