Ferroelectric Properties and Microstructures of Bi4-x LuxTi3O12 Thin Films

Min Chen; X.A. Mei; J. Liu

doi:10.4028/www.scientific.net/AMR.833.33

Paper Titles

Electrical Characterization and Microstructures of Bi_4-xTm_xTi₃O₁₂ Ceramics
p.17

Ferroelectric Characterization and Microstructures of Bi_4-xLu_xTi₃O₁₂ Ceramics
p.21

Electrical Characterization and Microstructures of Bi_4-xSc_xTi₃O₁₂ Ceramics Grown by Electroceramic Technique
p.25

Large Remanent Polarization of Bi₄Ti₃O₁₂ Films by Ho³⁺ Substitution
p.29

Ferroelectric Properties and Microstructures of Bi_4-x Lu_xTi₃O₁₂ Thin Films
p.33

Electrical Characterization and Microstructures of Bi_4-x Sc_x Ti₃O₁₂ Thin Films Grown by Pulsed Laser Deposition Technique
p.37

Preparation and Ferroelectric Properties of Bi_4-xTm_xTi₃O₁₂ Thin Films
p.41

Sol-Gel Synthesis of Nanocomposite Li₄Ti₅O₁₂/Carbon Nanotubes as Anode Materials for High-Rate Performance Lithium Ion Batteries
p.45

An Electrochemical Impedance Spectroscopy (EIS) Study of Zn-Doped Li (Ni_1/3Co_1/3Mn_1/3) O₂Cathode Materials in the First Delithiation Process
p.50

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 833Ferroelectric Properties and Microstructures of...

Ferroelectric Properties and Microstructures of Bi_4-x Lu_xTi₃O₁₂ Thin Films

Abstract:

Lu₂O₃-doped bismuth titanate (Bi_4-xLu_xTi₃O₁₂: BLT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Lu-doping into BIT caused a large shift of the Curie temperature ( T_C ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Lu doping into BIT also result in a remarkable improvement in ferroelectric property. The P_r and the E_c values of the BLT film with x=0.75 were 28 μC/cm² and 65 kV/cm, respectively.

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Advanced Materials Research (Volume 833)

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33-36

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https://doi.org/10.4028/www.scientific.net/AMR.833.33

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Online since:

November 2013

Authors:

Min Chen, X.A. Mei, J. Liu

Keywords:

Bismuth Titanate, Dielectric, Ferroelectric, Film

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