Preparation and Ferroelectric Properties of Bi4-xTmxTi3O12 Thin Films

Bei Li; X.H. Yuan; M. Chen; X.A. Mei

doi:10.4028/www.scientific.net/AMR.833.41

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 833Preparation and Ferroelectric Properties of...

Preparation and Ferroelectric Properties of Bi_4-xTm_xTi₃O₁₂ Thin Films

Abstract:

Tm₂O₃-doped bismuth titanate (Bi_4-xTm_xTi₃O₁₂, BTT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tm doping into BIT results in remarkable improvement in ferroelectric properties. The P_r and the E_c values of the BTT film with x=0.75 were 28 μC/cm² and 80 kV/cm, respectively.

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Advanced Materials Research (Volume 833)

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41-44

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.833.41

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Online since:

November 2013

Authors:

Bei Li, X.H. Yuan, M. Chen, X.A. Mei

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Bismuth Titanate, Dielectric, Ferroelectric, Film

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