Electrical Characterization and Microstructures of Bi4-x Scx Ti3O12 Thin Films Grown by Pulsed Laser Deposition Technique

Fang Tian; X.A. Mei; M. Chen; C.Q. Huang

doi:10.4028/www.scientific.net/AMR.833.37

Paper Titles

Ferroelectric Characterization and Microstructures of Bi_4-xLu_xTi₃O₁₂ Ceramics
p.21

Electrical Characterization and Microstructures of Bi_4-xSc_xTi₃O₁₂ Ceramics Grown by Electroceramic Technique
p.25

Large Remanent Polarization of Bi₄Ti₃O₁₂ Films by Ho³⁺ Substitution
p.29

Ferroelectric Properties and Microstructures of Bi_4-x Lu_xTi₃O₁₂ Thin Films
p.33

Electrical Characterization and Microstructures of Bi_4-x Sc_x Ti₃O₁₂ Thin Films Grown by Pulsed Laser Deposition Technique
p.37

Preparation and Ferroelectric Properties of Bi_4-xTm_xTi₃O₁₂ Thin Films
p.41

Sol-Gel Synthesis of Nanocomposite Li₄Ti₅O₁₂/Carbon Nanotubes as Anode Materials for High-Rate Performance Lithium Ion Batteries
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An Electrochemical Impedance Spectroscopy (EIS) Study of Zn-Doped Li (Ni_1/3Co_1/3Mn_1/3) O₂Cathode Materials in the First Delithiation Process
p.50

Preparation and Electrochemical Performance of SnO₂/C-La_0.3Sr_0.7MnO₃Composites for Li-Ion Anode
p.56

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 833Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_4-x Sc_x Ti₃O₁₂ Thin Films Grown by Pulsed Laser Deposition Technique

Abstract:

Sc-doped bismuth titanate (Bi_4-xSc_xTi₃O₁₂: BST) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Sc doping into BIT result in a remarkable improvement in ferroelectric properties. The P_r and the E_c values of the BST film with x=0.75 were 25 μC/cm² and 65 kV/cm, respectively.

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Advanced Materials Research (Volume 833)

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37-40

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https://doi.org/10.4028/www.scientific.net/AMR.833.37

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November 2013

Authors:

Fang Tian, X.A. Mei, M. Chen, C.Q. Huang

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Bismuth Titanate, Ferroelectric, Film

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