Large Remanent Polarization of Bi4Ti3O12 Films by Ho3+ Substitution

Min Chen; X.A. Mei; C.Q. Huang

doi:10.4028/www.scientific.net/AMR.833.29

Paper Titles

Electrical Characterization and Microstructures of Bi_4-x Ho_xTi₃O₁₂ Ceramics
p.13

Electrical Characterization and Microstructures of Bi_4-xTm_xTi₃O₁₂ Ceramics
p.17

Ferroelectric Characterization and Microstructures of Bi_4-xLu_xTi₃O₁₂ Ceramics
p.21

Electrical Characterization and Microstructures of Bi_4-xSc_xTi₃O₁₂ Ceramics Grown by Electroceramic Technique
p.25

Large Remanent Polarization of Bi₄Ti₃O₁₂ Films by Ho³⁺ Substitution
p.29

Ferroelectric Properties and Microstructures of Bi_4-x Lu_xTi₃O₁₂ Thin Films
p.33

Electrical Characterization and Microstructures of Bi_4-x Sc_x Ti₃O₁₂ Thin Films Grown by Pulsed Laser Deposition Technique
p.37

Preparation and Ferroelectric Properties of Bi_4-xTm_xTi₃O₁₂ Thin Films
p.41

Sol-Gel Synthesis of Nanocomposite Li₄Ti₅O₁₂/Carbon Nanotubes as Anode Materials for High-Rate Performance Lithium Ion Batteries
p.45

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 833Large Remanent Polarization of Bi4Ti3O12 Films by...

Large Remanent Polarization of Bi₄Ti₃O₁₂ Films by Ho³⁺ Substitution

Abstract:

Ho-doped bismuth titanate (Bi_4-xHo_xTi₃O₁₂: BHT) and pure Bi₄Ti₃O₁₂ (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BHT Fims with x=0.75 were above 30μC/cm2 and 60KV/cm , respectively.

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Periodical:

Advanced Materials Research (Volume 833)

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29-32

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.833.29

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Online since:

November 2013

Authors:

Min Chen, X.A. Mei, C.Q. Huang

Keywords:

Bismuth Titanate, Ferroelectric, Film

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References

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