An Ultraviolent-Enhanced Response Solar Cell and Tunneling Effect

Bo He; Hui Wei Du; Lei Zhao; Fei Xu; Zhong Quan Ma

doi:10.4028/www.scientific.net/AMR.873.528

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873An Ultraviolent-Enhanced Response Solar Cell and...

An Ultraviolent-Enhanced Response Solar Cell and Tunneling Effect

Abstract:

A sort of ITO/SiO₂/n⁺p configuration of solar grade silicon - based SINP device has been successfully fabricated by coupling high quality of indium tin oxide (ITO) thin film and ultra-thin silicon dioxide buffer layer on the p-n junction, which showed a potential to improve the short-circuit current density (J_SC) as well as the conversion efficiency. The progress to avoid the use of last two processes with PECVD and high temperature firing in the normal production for the crystal silicon solar cell may be a way toward the low cost and the high efficiency. In addition, the tunneling hypostasis of carriers is present in the device.

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Periodical:

Advanced Materials Research (Volume 873)

Pages:

528-533

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.873.528

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Online since:

December 2013

Authors:

Bo He*, Hui Wei Du, Lei Zhao, Fei Xu, Zhong Quan Ma

Keywords:

High Current Density, Low Cost Processing, Novel Configuration of C-Si Solar Cell

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