Process Study of Atomic Layer Deposition Al₂O₃ in Industry Application for Solar Cells

Abstract:

The rear surface of multi-silicon has been passivated by Atomic Layer Deposition (ALD) Al₂O₃ and Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx. The results of the effective lifetime of the silicon before and after firing show that the thickness of Al₂O₃ thin films has a significant effect on the passivation quality. The effective lifetime of the silicon can reach up to 40.64μs and show a better passvation quality when the thickness of Al₂O₃ film is 18nm. Moreover, the impact of spacing of the laser opening-line contact on open-circuit voltage and fill-factor has been furthermore investigated. The cells have a better performance when the spacing of the opening-line is 1.2mm. The result of the local topography of the opening-line contact tested by Scanning Electron Microscopy (SEM) shows that the existing of the void in the interface between Al and Si is the main reason for the bad performance of the cells.

• Periodical: Advanced Materials Research (Volume 873)
• Pages: 540-545
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.873.540
• Online since: December 2013
• Authors: Hong Bo Qiu*, Hui Qi Li, Bang Wu Liu, Yang Xia
• Keywords: Al₂O₃, Atomic Layer Deposition, Laser Opening-Line Contact, Minority Carrier Lifetime, Multi-Silicon

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