The Development and Application of Si-Based Quantum Dot Resonant Tunneling Diodes

Abstract:

The development history of resonant tunneling diodes (RTD), the principle of quantum dot resonant tunneling diodes (QDRTD), and their characteristics of exceptional negative differential resistance (NDR) of QDRTD, are briefly introduced in this paper. The typical type and the design processes of QDRTD, and recent research progress are summarized in detail. Finally, the facing problems and the future necessary development directions of QDRTD are discussed.

• Periodical: Advanced Materials Research (Volume 873)
• Pages: 737-743
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.873.737
• Online since: December 2013
• Authors: Jin Tao Yao*, Chong Wang, Jie Yang, Yu Yang
• Keywords: Carrier Transport, Resonant Tunneling Diodes, Self-Assembled Quantum Dots, Silicon Based

References

[1] Mazumder, P., et al., Digital circuit applications of resonant tunneling devices. Proceedings of the IEEE, 1998. 86(4): pp.664-686.

DOI: 10.1109/5.663544

[2] Esaki L, New phenomenon in narrow germanium p-n junctions. Phys. Rev, 1958: 109-114.

[3] Tsu R, Esaki L. Tunneling in a finite supurlattice. Appl. Phys. Lett., 1973, 22: 562-568.

[4] Chang L L, Esaki L, Tsu R. Resonant tunneling in semicondutor double barriers. Appl. Phys. Lett., 1974, 24: 593-599.

DOI: 10.1063/1.1655067

[5] Capasso F., Sen S., Beltram F. In: Sze S M ed., High Speed Semiconductor Devices. New York: Wiley, 1990: 465.

[6] Tom P.E., Broekaert, Lee W, et al. Pseudomotphic In0. 53Ga0. 47As/AlAs/InAs resonant tunnel- ing diodes with peak-to-valley current ratios of 30 at room temperature. Applied Physics Lett- ers, 1988, 53(6): 1545-1547.

DOI: 10.1063/1.99951

[7] Smith R.P., Allen S.T., Reddy M. et al. 0. 1µm Schottky-collector AlAs/GaAs resonant tunneling diodes. IEEE , Electron Device Letters, 1994, 15(8): 295-297.

DOI: 10.1109/55.296221

[8] Lippens D, Barbier E, Mounaix P. Fabrication of high-performance AlxGa1-xAs/ InyGa1-yAs/ GaAs resonant tunneling diodes using a microwave-compatible technology. IEEE Electron Device Lett, 1991, 12( 3) : 114.

DOI: 10.1109/55.75738

[9] Choi S, Lee B, Kim T, et al. A varactor-tuned MMIC VCO using InP-based RTD-HBT technology. Microwave and Optical Technology Letters, 2005, 45( 5) : 408-414.

DOI: 10.1002/mop.20838

[10] Chen J, Lu J J, Pan W, et al. Observation of periodical negative differential conductivity in nanocrystalline silicon/crystalline silicon heterostructures. Nanotechnology, 2007, 18(1): 015203.

DOI: 10.1088/0957-4484/18/1/015203

[11] Sun J, Li R, Zhao C, et al. Room-Temperature Observation of Electron Resonant Tunneling Through InAs∕ AlAs Quantum Dots. Electrochemical and solid-state letters, 2006, 9(5): G167-G170.

DOI: 10.1149/1.2180529

[12] Luscombe J H, Randall J N, et al. Resonant tunneling quantum-dot diodes: physics, limitations, and technological prospects. Proceedings of the IEEE, 1991, 79(8): 1117-1130.

DOI: 10.1109/5.92071

[13] Yakimov, A.I., et al., Interlevel Ge/Si quantum dot infrared photodetector. Journal of Applied Physics, 2001. 89(10): pp.5676-5681.

DOI: 10.1063/1.1346651

[14] Kim, J.S., et al., Energy level control for self-assembled InAs quantum dots utilizing a thin AlAs layer. Applied Physics Letters, 2001. 78(21): pp.3247-3249.

DOI: 10.1063/1.1373410

[15] Daming, Z., et al. The photocurrent of resonant tunneling diode controlled by the charging effects of quantum dots. in Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on. (2012).

DOI: 10.1109/nusod.2012.6316501

[16] Kamiya, I., et al., Resonant tunneling through a single self-assembled InAs quantum dot in a micro-RTD structure. Physica E: Low-dimensional Systems and Nanostructures, 2002. 13(2–4): pp.131-133.

DOI: 10.1016/s1386-9477(01)00503-3

[17] Sun, J., et al., Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer. Mesoscale and Nanoscale Physics, 2006. 153(7): pp.703-706.

DOI: 10.1149/1.2202091

[18] Kapteyn, C.M.A., et al., Hole and electron emission from InAs quantum dots. Applied Physics Letters, 2000. 76(12): pp.1573-1575.

[19] Weilian Guo, The device and application of resonant tunneling. 2009, Beijing: Science Press. (In Chinese).

[20] Imai, K., A new dielectric isolation method using porous silicon. Solid-State Electronics, 1 981. 24(2): pp.159-164.

DOI: 10.1016/0038-1101(81)90012-5

[21] Yincai P. , et al., Analysis of characteristics of nc-Si: H/c-Si resonant tunneling diodes Chinese Journal of Semiconductors, 1998(08): 24-31. (In Chinese).

[22] Hsu, Y.C., et al., Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes. Physica E: Low-dimensional Systems and Nanostructures, 2007. 38(1–2): pp.135-138.

DOI: 10.1016/j.physe.2006.12.043

[23] Pan W., et al., Resonant tunneling characteristics in crystalline silicon/nanocrystalline silicon heterostructure diodes, Phys. Rev. B 74, 125308-(1-6) (2006).

DOI: 10.1103/physrevb.74.125308

[24] Yakimov, A.I., et al., Interlevel Ge/Si quantum dot infrared photodetector. Journal of Applied Physics, 2001. 89(10): pp.5676-5681.

DOI: 10.1063/1.1346651