Analysis and Simulation of Temperature and I-V Characteristics for SiC Schottky Barrier Diodes

Abstract:

In this paper, semiconductor simulation software ISE TCAD 10.0 was used to simulate W/SiC SBD forward voltage characteristics and reverse voltage characteristics at different temperatures on the basis of theoretical analysis, and the valuable results were achieved. Under the temperature range from 73 K to 773 K, the simulation results of W/SiC Schottky barrier diode forward voltage characteristics showed that forward characteristics were significant influenced by the temperature. At room temperature (303K), if bias voltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Schottky barrier diode was about 0.2V. If bias voltage was high, the current increased will be high, and the series resistance effect will become obvious. Under lower bias (2V), a different temperature from 73K to 573K had small impact on reverse current-voltage characteristics. The results showed that the device had the good rectifier characteristics, small reverse current, high breakdown voltage, and the device can steadily and long-term work in high temperature and other complex environment.

• Periodical: Advanced Materials Research (Volumes 875-877)
• Pages: 690-694
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.875-877.690
• Online since: February 2014
• Authors: Bo Yuan, Shi Bin Chen, Xiao Jia
• Keywords: I-V Characteristics, SBD, Silicon Carbide (SiC), Temperature

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