Structure, Electrical, Optical and Magnetic Properties of Mn-Doped Copper Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering

Abstract:

Mn-doped Cu₃N films were prepared by radio frequency reactive magnetron sputtering method under different manganese concentration. The deposits exhibit a satisfactory crystallinity and a preferred growth orientation along the (111) plane. The shapes of crystalline grains vary from pyramid-like to rugby-ball-like with the Mn-doping constituent in Cu₃N film reaching 0.02%. The electrical resistivity of Mn-doped Cu₃N films has dramatically increased from 0.102×10³ Ω·cm to 0.495×10³ Ω·cm at room temperature. Moreover, the reflectivity difference and ferromagnetic property have also been investigated.

• Periodical: Advanced Materials Research (Volume 893)
• Pages: 519-523
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.893.519
• Online since: February 2014
• Authors: Jian Bo Yang, Xiao Feng Li, Xing Ao Li, Jian Ping Yang, Tao Yang, Min Fen Gu
• Keywords: Copper Nitride Thin Films, Magnetic Property, Magnetron Sputtering, Mn-Doped

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