Effect of Annealing on Conductivity Type of Nanocrystalline ZnO Films Fabricated by RF Magnetron Sputtering

Abstract:

Nanocrystalline ZnO films were deposited by rf reactive magnetron sputtering. The films were characterized by reflection high-energy electron diffraction, X-ray photoelectron spectroscopy and gas sensing measurements. It was found that annealing of the film enabled to invert its conductivity type. Thus, as-deposited ZnO film showed p-type conductivity while annealed film showed n-type conductivity behavior. The p-and n-type conductivities of the films obtained by gas sensing measurements have been confirmed by XPS results. The gas sensing properties of the films were investigated upon exposure to 10 ppm of NO₂ at 22°C and exhibited good sensitivity with fast response and recovery times. The sensor response to NO₂ was found to be profoundly dependent on the conductivity behavior of the film.

• Periodical: Advanced Materials Research (Volume 893)
• Pages: 539-542
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.893.539
• Online since: February 2014
• Authors: Evgeny Yurievich Gusev*, Oleg Alekseevich Ageev, Vladislav Anatolyevich Gamaleev, Aleksander Sergeevich Mikhno, Olga Olegovna Mironenko, Evgeniy Anatol'evich Pronin
• Keywords: Gas Sensitivity, Magnetron Sputtering, Nanocrystalline Film, Nanotechnology, n-Type, p-Type, XPS, Zinc Oxide (ZnO)

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