Transparent Conducting SnO2:Al Films Prepared on α-Al2O3 (0001) by MOCVD

Feng Ji; Yong Liang Tan; Chang Lv; Zhen Tai Hou

doi:10.4028/www.scientific.net/AMR.893.554

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Transparent Conducting SnO₂:Al Films Prepared on α-Al₂O₃ (0001) by MOCVD

Abstract:

1-10% (atomic ratio of Al/Sn) Aluminium-doped tin oxide (SnO₂:Al) single crystalline films were prepared on α-Al₂O₃ (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The films were annealed in air at 400 °C, 700°C, 800°C and 900°C, respectively. The structural, electrical and optical properties of the samples were investigated. The obtained films were rutile structure with high a-axis orientation. The Hall mobility and carrier concentration of the samples were varied with the Al concentration increasing and different anneal temperature. The average transmittance for the SnO₂:Al films in the visible range was over 82% and the absorption edge shifted to the shorter wavelength with Al concentration increasing. The position of Al3+ in the lattice was influenced by anneal temperature. After high temperature annealed, the location of SnO₂ (200) diffraction peak shifted slightly towards low 2θ direction which was due to the lattice relaxation, and the absorption edge of the films shifted to the shorter wavelength because of the Burstein-Moss effect.