Deposition Time Variation Analysis on Indium Tin Oxide Film

Zaliman Sauli; Vithyacharan Retnasamy; Ong Tee Say; Chai Jee Keng

doi:10.4028/www.scientific.net/AMR.893.562

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 893Deposition Time Variation Analysis on Indium Tin...

Deposition Time Variation Analysis on Indium Tin Oxide Film

Abstract:

Indium Tin Oxide (ITO) is a transparent conducting material. The particular electrical and optical properties of the ITO make it becomes an important material that being applied in optoelectronic filed. In this paper, investigation on various parameters in time of deposition and ITO layer on specimen was done. The AFM (Atomic Force Microscope) was used to investigate grain size on specimen. It shows more layer deposition of ITO, it will increase grain size on the specimen. In addition, grain size on specimen was increased after annealing process compared test specimen before annealing process. Besides that, semiconductor parametric analyser was used to examine resistance on ITO films. The higher value of resistance is showed on test specimen after heat treatment compared to test specimen before heat treatment.

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Periodical:

Advanced Materials Research (Volume 893)

Pages:

562-565

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.893.562

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Online since:

February 2014

Authors:

Zaliman Sauli*, Vithyacharan Retnasamy, Ong Tee Say, Chai Jee Keng

Keywords:

AFM, Grain Size, ITO, Resistance

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