Preparation of Ion Implanted Porous Silica Thin Film

Abstract:

The porous silica thin film was selected as thermal insulation thin film of uncooled infrared detector in order to reduce device thermal conduction loss. A new ion implantation manufacture method of porous silica thin film was studied in this paper. The porous silica thin films were prepared by ion implanted method and acid/alkali two-step catalytic sol-gel method respectively for comparison purpose. H⁺ and N⁺ ion mixing implantation technique adopted makes the gas bubble in the depth and shallow of silica thin film respectively, and one setting power can form porous structure with porous rate between 17% and 29%. By properly control the heat dealing process, gas bubble will format, expand, but not abrupt in the silica thin film. Sol-gel derived silica thin film has porous rate of 62.8%, but it cannot be used as substrate of electrode film and infrared thermal sensing film because of its irregular surface. The surface of ion implanted silica thin film is even and can be used as substrate, and its insulating performance could be further enhanced by etch off the thick silica substrate from back, after pyroelectric infrared sensing layer formed.

• Periodical: Advanced Materials Research (Volume 893)
• Pages: 533-538
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.893.533
• Online since: February 2014
• Authors: Yong Bao*, De Yin Zhang, Ying Luo, Wei Qian, Kun Li
• Keywords: Ion Implanted, Porous, Silica, Sol-Gel, Thin Film

References

[1] Norkus V., Pyroelectric infrared detectors based on lithium tantalate：state of the art and prospects[C] , Optical Systems Design. International Society for Optics and Photonics, Proc. of SPIE. 2004, 5251: 121-128.

[2] Zhang D. -Y., Luo W., Bao et al., Thickness effect and etching implement of silicon substrate of LiTaO3 thin film infrared detector[C], 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies. International Society for Optics and Photonics, Proc. of SPIE. 2010, 7658: 76580Q-76580Q-6.

DOI: 10.1117/12.866068

[3] Radford W A, Murphy D F, Ray M, et al. 320 x 240 silicon microbolometer uncooled IR FPAs with on-chip offset correction [C], Aerospace/Defense Sensing and Controls. International Society for Optics and Photonics, Proc. of SPIE. 1996, 2746: 82-92.

DOI: 10.1117/12.243062

[4] LI Jinhua, LI Kun, CHEN Yan, et al. Study of PT/P(VDF-TrFE) pyroelectric sensor based on porous SiO2 substrate[J](in Chinese),J. of functional materials and devices, 1998, 4(1): 19-23.

[5] Kim W S, Yoon K H, Kim E S. Microwave dielectric characteristics of the Ca2/5Sm2/5TiO3-Li1/2Nd1/2TiO3 ceramics[J]. Japanese Journal of Applied Physics, 2000, 39: 5650-5653.

[6] Zeng Ling-Ke, Cao Jian-Xin, Wang Hui, et al. The nanoporous super thermal insulation material compounded with xonotlite-SiO2-aerogel[J](in Chinese), J. of Cermics, 2004, 25(2): 75-80.

[7] Ruan Gang, Chen Zhi-Tao, Xiao Xia, et al. Fabrication Process, Characteristic and Application Prospect of Nanoporous Silica in ULSI Circuits[J](in Chinese), Research & prograess of solid state electronics, 2002, 22(3): 349-354.

[8] LI Zhi, YAO Xi, ZHANG Liang-Yin. Nano-porous silica films prepared by sol-gel granular silica Sol [J](in Chinese), Electronic components & materials, 2005, 24(2): 32-37.

[9] WU Zhao-feng, WU Guang-ming, YAO Lan-fang, et al. Preparation and Study of Low Dielectric Constant Mesoporous Silica Films [J](in Chinese), J. of materials science and engineering, 2005, 23(3): 408-411.

[10] GUO Wen-li, JIN Zheng-guo. Template-Organized Synthesis Peparation of porous SiO2 and its application in nano-material[J](in Chinese), J. of Tianjing Univesity, 2000, 33(4): 534-536.

[11] ZHAN Da, MA Xiao-bo, LIU Wei-li, et al. Preparation and investigation of GOI material by using smart- cut technology[J](in Chinese), J. of functional materials and devices, 2007, 13(3): 207-212.