Effect of Thickness and Annealing Temperature on the Properties of PZT Films at Morphotropic Phase Boundary Composition Prepared by Sol-Gel Spin-On Technique

Jegatheesan Periyannan; Muneewaran Muniyandi; Giridharan Nambi Venkatesan

doi:10.4028/www.scientific.net/AMR.895.17

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 895Effect of Thickness and Annealing Temperature on...

Effect of Thickness and Annealing Temperature on the Properties of PZT Films at Morphotropic Phase Boundary Composition Prepared by Sol-Gel Spin-On Technique

Abstract:

Pb (Zr_xTi_1-x)O₃ films at morphotropic phase boundary composition (x=0.52) were deposited on Pt/Ti/SiO₂/Si substrates by sol-gel spin on technique. Thickness of the films were varied up to 1μm by step-by-step crystallization process and annealed at 500, 600 and 700 °C. Films annealed at 500 °C had poor degree of crystallization for all the thicknesses while 600 and 700 °C annealed films were found to be well crystallized with a (111) preferential orientation. Also an enhanced degree of preferential orientation was observed on the films annealed at 600 °C compared to films annealed at 700 °C. Room temperature dielectric measurements showed higher dielectric constant values for the films annealed at 600 °C compared to films annealed at 700 °C. The remnant polarization (P_r) and coercive field (E_c) at an applied field of 160 kV/cm depicted that 600 °C annealed films had a higher P_r and lower E_c values compared with the 700 °C annealed films attributed to the higher degree of preferential orientation.

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Periodical:

Advanced Materials Research (Volume 895)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.895.17

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Online since:

February 2014

Authors:

Jegatheesan Periyannan, Muneewaran Muniyandi, Giridharan Nambi Venkatesan

Keywords:

Dielectric, Ferroelectric, MPB, PZT, Sol-Gel

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