Characterization of Al2O3 Thin Films Deposited by PLD

Nurhanna Badar; Norlida Kamarulzaman

doi:10.4028/www.scientific.net/AMR.895.25

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 895Characterization of Al2O3 Thin Films Deposited by...

Characterization of Al₂O₃ Thin Films Deposited by PLD

Abstract:

Aluminium Oxide (Al₂O₃) thin films have been widely used in many kinds of applications due to their excellent properties such as good mechanical strength, high abrasive and insulating characteristics. In this work, Al₂O₃thin films are deposited on silicon (100) substrates using pulsed laser deposition (PLD). The deposition is done using different chamber environments. The crystal structure of the thin films is investigated using Grazing Incidence Diffraction (GID). The surface morphology and thicknesses of the thin films are studied by Field Emission Scanning Electron Microscopy (FESEM). The electrical current-voltage (I-V) characteristics of the thin films are measured using Signaton H150 Probe Station with Keithly 302 source measurement. It was found that the different process parameters greatly influenced the characteristics of the thin films obtained. FESEM images show high quality, smooth and dense films obtained using the PLD method. Generally, all films show rectifying behaviour.

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Advanced Materials Research (Volume 895)

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25-28

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https://doi.org/10.4028/www.scientific.net/AMR.895.25

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Online since:

February 2014

Authors:

Nurhanna Badar, Norlida Kamarulzaman

Keywords:

Al₂O₃, Chamber Environment, PLD

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