Defects Induced by Reactive Ion Etching in Ge Substrate

Kusumandari Kusumandari; Noriyuki Taoka; Wakana Takeuchi; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima

doi:10.4028/www.scientific.net/AMR.896.241

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 896Defects Induced by Reactive Ion Etching in Ge...

Defects Induced by Reactive Ion Etching in Ge Substrate

Abstract:

We investigated impacts of the Ar and CF₄plasma during reactive ion etching (RIE) on defect formation in the Ge substrates using the deep-level-transient-spectroscopy (DLTS) technique. It was found that the Ar plasma causes the roughening of the Ge surface. Moreover, the Ar plasma induces a defect with an energy level of 0.31 eV from the conduction band minimum in the Ge substrate, confirming by DLTS spectra. On the other hand, the CF₄ plasma hardly induces the surface roughness of Ge. However, the CF₄ plasma induces many kinds of electron and hole traps. It should be noted that the defects associated with Sb and interstitials are widely distributed to around 3-µm.

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Periodical:

Advanced Materials Research (Volume 896)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.896.241

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Online since:

February 2014

Authors:

Kusumandari Kusumandari, Noriyuki Taoka, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima

Keywords:

Ar, CF₄, Crystalline Defect, Ge, Reactive Ion Etching

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