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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 906Simulation of Ion Beam Irradiation Effects in...

Simulation of Ion Beam Irradiation Effects in Perovskite Oxide Memristors

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Abstract:

Radiation effects of ion beams in perovskite oxide memristors are analyzedand linked to absorbed dose values, calculated from simulations of ion transport. Several ion species were used in simulations, chosen to represent certain commonly encountered radiation environments. Results indicate that considerable formation of oxygen ion - oxygen vacancy pairs, as well as advent of displaced rare earth and alkaline atoms, is to be expected. Oxygen vacancies can lead to a decrease or increase of active layer resistance, depending on applied voltage polarity. The loss of vacancies from the device is bound to impair the performance of the memristor. Calculated absorbed dose values in the memristor for various incident ion beams are typically on the order of several kGy.

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Periodical:

Advanced Materials Research (Volume 906)

Pages:

89-95

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.906.89

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Online since:

April 2014

Authors:

Ivan Knežević, Marija Obrenović, Zoran Rajović, Bratislav Iričanin, Predrag Osmokrović

Keywords:

Absorbed Dose, Ion Beam, Memristor, Monte Carlo Simulation, Perovskite Oxide

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] D. L. Lewis, H.S. Lee, Architectural Evaluation of 3D Stacked RRAM Caches, IEEE International Conference on 3D System Integration 2009, 3DIC (2009) 1-4.

DOI: 10.1109/3dic.2009.5306582

[2] F. Pan, Experimental and Simulation Study of Resistive Switches for Memory Applications, a Dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in electrical Engineering and Computer Sciences, University of California, Berkeley, fall (2012).

[3] W. M. Tong et al., IEEE Trans. Nucl. Sci. 57 (2010) 1640.

[4] M. Vujisic, K. Stankovic, N. Marjanovic, P. Osmokrovic, IEEE Trans. Nucl. Sci. 57 (2010).

[5] N. Marjanovic, M. Vujisic, K. Stankovic, D. Despotovic, P. Osmokrovic, Nucl. Technol. Radiat. 25 (2010) 120-125.

DOI: 10.2298/ntrp1002120m

[6] I. Knezevic et al., Nucl. Technol. Radiat. 27 (2012) 290-296.

[7] Sun-ae SEO et al., U.S. Patent 2013/0252395 A1 (2013).

[8] J.J. Yang et al., Nat. Nanotechnol. 3 (2008) 429–433.

[9] T. Driscoll et al., Science 325 (2009) 1518–1521.

[10] T. Driscoll et al., Appl. Phys. Lett. 95 (2009) 043503.

[11] I.H. Inoue et al., Phys. Rev. B 77 (2008) 0351.

[12] D. Lee et al., Appl. Phys. Lett. 90 (2007) 122104.

[13] S. Seo et al., Appl. Phys. Lett. 85 (2004) 5655.

[14] H. Shima et al., Appl. Phys. Lett. 91 (2007) 012901.

[15] J. Yao et al., Nano Lett. 10 (2010) 4105.

[16] J. Yao et al., ACS NANO 3 (2009) 4122–4126.

[17] K. Terabe et al., Nature 433 (2005) 47–50.

[18] T. Tamura et al., Jpn. J. Appl. Phys. 45 (2006) L364–L366.

[19] R. Waser and M. Aono, Nature Mater. 6 (2007) 833–840.

[20] S.H. Jo and W. Lu, Nano Lett. 8 (2008) 392–397.

[21] Y. Dong et al., Nano Lett. 8 (2008) 386–391.

[22] S.H. Jo et al., Nano Lett. 9 (2009) 870–874.

[23] Information on http: /www. itrs. net.

[24] Y.B. Nian et al., Phys. Rev. Lett. 98 (2007) 146403.

[25] M.J. Rozenberg et al., Phys. Rev. B 81 (2010) 115101.

[26] W. W. Zhuang et al., IEDM Tech. Dig. (2002) 193.

[27] D. Seong et al., IEDM Tech. Dig. (2009) 101.

[28] M. Jo et al., VLSI (2010) 53.

[29] Y.B. Nian et al., Phys. Rev. Lett. 98 (2007) 146403(1)-146403(4).

[30] S.H. Huerth et al., Phys. Rev. B 67 (2003) 180506(R).

[31] E. Dagotto et al., Physics Reports 344 (2001).

[32] A.A.E. Stevens et al., Journal of Vacuum Science & Technology A: Vacuum, Surfaces and Films, 24 (2006) 1933-(1940).

[33] M. Vujisic, K. Stankovic, P. Osmokrovic, Applied Mathematical Modeling 35 (2011) 3128-3135.

[34] K. Stankovic, M. Vujisic, D. Kovacevic, P. Osmokrovic, Measurement 44 (2011) 1713-1722.

[35] Fengyan Zhang et al., U.S. Patent 7, 169, 637 B2 (2007).

[36] M.B. Salamon and M. Jaime, Rev. Mod. Phys. 73, 583 (2001).

[37] J.P. Joshi et al., J. Phys. Condens. Matter. 2869 (2004).

[38] N. Marjanovic, M. Vujisic, K. Stankovic, P. Osmokrovic, Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology 166 (2011) 1-7.

[39] M. Vujisic, D. Matijasevic, E. Dolicanin, P. Osmokrović, Nucl. Technol. Radiat. 26 (2011) 254-260.

DOI: 10.2298/ntrp1103254v

[40] JJ. Yang et al., Nat. Nanotechnol. 3 (2008) 429-433.