The Application of CFZ-Si Monocrystal Material in Photovoltaic Field

Article Preview

Abstract:

As the main substrate materials for solar cell, Czochralskisilicon (CZ-Si) has more crystal defects, higher impurities content and so on, which limit the further improvement of conversion efficiency (h). Floating zone melting silicon (FZ-Si) has excellent performance but the feed rod cost is much higher, so it is hardly used for solar cell widely. To solve this problem, we developed CFZ silicon monocrystal (CFZ-Si). First the poly was made into poly rod withΦ110~Φ130mm by CZ process and then made into CFZ-Si by FZ method. During FZ process, the resistivity is controlled by gas doping and the process is adjustable. CFZ-Si combines advantages of CZ-Si with FZ-Si. It has less crystal defects, lower impurities content especially oxygen content (<0.2 ppm) and excellent consistency of axial resistivity. Meanwhile, poly rod used has lower price and easier fabrication, so CFZ-Si cost is much lower and the further cost reduction is easy. Therefore, CFZ-Si has significant comprehensive advantages and broader prospect in the future photovoltaic field.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 915-916)

Pages:

519-523

Citation:

Online since:

April 2014

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2014 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] Deren Yang: Solar cell materials (Beijing, Chemical Industry Press, 2006. 10). In Chinese.

Google Scholar

[2] Erich Dornberger: Prediction of OSF Ring Dynamics and Grown-in Voidsin Czochralski Silicon Crystals (Catholic University of Louvain, 1997).

Google Scholar

[3] Mingxian Lin. Semiconductor material technology of silicon wafers [M]. TaiWan: All China books co., LTD, 2007. In Chinese.

Google Scholar

[4] Lin Chang, Bin Cui, Qigang Zhou, et al: Numerical Simulation of Crystal Growth Velocity on Micro-Defects in CZ-Si [J]. Beijing YouYan semiconductor materials co., LTD. Semiconductor Materials and Equipment. 2012, 37(3): 206-211.

Google Scholar

[5] Fischer H, Pschunder W: Investigation of photon and thermal induced changes in silicon solar cells[A]. CA, USA: Conference Record of the 10th IEEE Photovoltaic Specialists Conference, 1973, 404.

Google Scholar

[6] V.G. Weizer, H.W. Brandhorst, J.D. Broder, et al: Photon-degradation effects in terrestrial silicon solar cells [J] J. Appl. Phys, 1979, 50(6): 4443.

DOI: 10.1063/1.326437

Google Scholar

[7] Yuwen Zhao: LID mechanism of P type (boron) crystalline silicon solar cellsandthe technical improvement measures [J]. Function Materials, 2003, 4(34): 409-411. In Chinese.

Google Scholar

[8] J. Schmidt, K: Bothe. Structure and transformation of metastable boron and oxygen related defect center in crystalline silicon [J]. Physical Review B, 2004(69): 024107.

DOI: 10.1103/physrevb.69.024107

Google Scholar