Fabrication of Cu2ZnSnS4 Thin Films through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

Meng Xie; Hai Tao Zhang; Shu Zhang; Yong Xiang

doi:10.4028/www.scientific.net/AMR.915-916.838

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 915-916Fabrication of Cu2ZnSnS4 Thin Films through...

Fabrication of Cu₂ZnSnS₄ Thin Films through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

Abstract:

Cu₂ZnSnS₄ thin films have been synthesized through sulfurization of co-electrodeposited Cu-Zn-Sn metallic precursor. The obtained metallic precursor shows homogeneous surface. Combination of X-ray diffraction, energy dispersive X-Ray spectroscopy and Raman spectroscopy results shows that kesterite structure of Cu₂ZnSnS₄is formed, demonstrating that co-electrodeposition-sulfurization is a viable process for the synthesis of Cu₂ZnSnS₄film.

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Periodical:

Advanced Materials Research (Volumes 915-916)

Pages:

838-841

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.915-916.838

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Online since:

April 2014

Authors:

Meng Xie, Hai Tao Zhang, Shu Zhang*, Yong Xiang

Keywords:

Co-Electrodeposition, Cu₂ZnSnS₄, Sulfurization, Thin Film

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