Influence of AlInGaN Blocking Layer on the Violet InGaN Laser Diodes

Abstract:

The advantages of AlInGaN as a blocking layer on the influence of violet InGaN laser diodes have been simulated, these results showed that the temperature characteristic (T₀) of the violet InGaN laser diodes with AlInGaN blocking layer is lower than the T₀ of the violet InGaN laser diodes with AlGaN blocking layer. These phenomenons are due to the improvement of electronics and holes distribution in the quantum wells with using AlInGaN blocking layer. Simulation results also showed that most optical characteristics of the violet InGaN laser diodes can be enhanced by using the AlInGaN blocking layer instead of the AlGaN blocking layer. The lower threshold current, carrier density, threshold gain and higher output power, slop efficiency of the violet InGaN laser diodes with the AlInGaN blocking layer have been obtained.

• Periodical: Advanced Materials Research (Volumes 915-916)
• Pages: 842-846
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.915-916.842
• Online since: April 2014
• Authors: Shao Guang Dong*, Guo Jie Chen
• Keywords: AlInGaN Blocking Layer, InGaN Laser Diodes, Quantum Wells, Threshold Current

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