Effect of Annealing Oxygen Flow Rate on the Properties of Vanadium Oxide Films Deposited by Reactive Magnetron Sputtering

Hua Fu Zhang; Zhi Ming Wu; Xue Fei Wu; Ya Dong Jiang

doi:10.4028/www.scientific.net/AMR.936.651

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936Effect of Annealing Oxygen Flow Rate on the...

Effect of Annealing Oxygen Flow Rate on the Properties of Vanadium Oxide Films Deposited by Reactive Magnetron Sputtering

Abstract:

Vanadium oxide films were prepared on indium-tin oxide glass substrates at low temperature by means of reactive direct current magnetron sputtering and subsequent in-situ annealing process in pure oxygen ambient. In the process of annealing, the oxygen flow rates were varied from 0 to 15 SCCM in order to investigate the effect of annealing oxygen flow rates on the properties of the deposited films. The experimental results indicate that only the vanadium oxide films annealed under relatively high oxygen flow rates (≥ 0.8 SCCM) displayed insulator-metal transition. In addition, it was found that vanadium valence states, surface morphology, optical transmittance and phase transition temperature of the deposited films were sensitive to the annealing oxygen flow rates while the width of thermal hysteresis was relatively insensitive to the annealing oxygen flow rates.

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Periodical:

Advanced Materials Research (Volume 936)

Pages:

651-655

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.651

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Online since:

June 2014

Authors:

Hua Fu Zhang*, Zhi Ming Wu, Xue Fei Wu, Ya Dong Jiang

Keywords:

Annealing Oxygen Flow Rate, Insulator-Metal Transition, Thin Film, Vanadium Oxide

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