TEM Study of AlGaN/GaN on Hexagonal SiC Substrates

Alexandra Gkanatsiou; Christos B. Lioutas; Nikolaos Frangis; Narendraraj Chandraraj; Efstathios K. Polychroniadis; Pawel Prystawko; Mike Leszczynski

doi:10.4028/www.scientific.net/AMR.936.656

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936TEM Study of AlGaN/GaN on Hexagonal SiC Substrates

TEM Study of AlGaN/GaN on Hexagonal SiC Substrates

Abstract:

The present work concerns the microstructural characterization of a multi-component (based on GaN and related materials) and multi-layered (5 layers) film, grown on 6H-SiC substrate (with a misorientation of 1 degree off from the (0001) plane), using transmission electron microscopy (TEM). The TEM characterization showed no surface undulation, despite the presence of steps in the SiC/AlN interface.

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Periodical:

Advanced Materials Research (Volume 936)

Pages:

656-660

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.656

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Online since:

June 2014

Authors:

Alexandra Gkanatsiou, Christos B. Lioutas, Nikolaos Frangis, Narendraraj Chandraraj, Efstathios K. Polychroniadis*, Pawel Prystawko, Mike Leszczynski

Keywords:

GaN, Heteroepitaxy, Silicon Carbide (SiC), TEM

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