Optical and Electrical Properties of P-Type ZnO Thin Film Post-Treated by Plasma-Enhanced Chemical Vapor Deposition

Ping Cao; Yue Bai; Zhi Qu

doi:10.4028/www.scientific.net/AMR.971-973.115

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 971-973Optical and Electrical Properties of P-Type ZnO...

Optical and Electrical Properties of P-Type ZnO Thin Film Post-Treated by Plasma-Enhanced Chemical Vapor Deposition

Abstract:

In this paper, the high quality p-type nitrogen-doped ZnO film was prepared by use of post-treated by plasma-enhanced chemical vapor deposition. The p-type ZnO with the hole density of 2.2×10¹⁶ was obtained. The converting from n-type to p-type was observed, which was obvious on the analysis of the optical and electrical properties of the p-type ZnO. Nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions, and also partly compensated some donor defects. When the amount of activated nitrogen exceeded those donor states to realize an effective compensation, the transformation from n-type to p-type happened.

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Periodical:

Advanced Materials Research (Volumes 971-973)

Pages:

115-118

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.971-973.115

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Online since:

June 2014

Authors:

Ping Cao*, Yue Bai, Zhi Qu

Keywords:

Post-Treated, p-Type, ZNO

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