The Key Parameter Modeling of SiC MOSFET

Yong Long Peng; Rong Rong Li; Ya Bin Li

doi:10.4028/www.scientific.net/AMR.986-987.1391

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987The Key Parameter Modeling of SiC MOSFET

The Key Parameter Modeling of SiC MOSFET

Abstract:

This thesis mainly analysed the internal relations between parameters of SiC MOSFET and its dynamic and static characteristics respectively. And furthermore, a new method for modeling of SiC MOSFET based on PSpice was proposed in this paper. By introducing voltage’s controlling for voltage source E, we can compensate and correct the difference between PSpice default value of gate threshold voltage and actual value. At the same time, we can adopt two different junction capacitance models to describe the changes of junction capacitance which were brought about by the difference of the terminal voltage. In the meanwhile, there are newly increased source-drain resistance of MOSFET and gate resistance with the temperature change of variable temperature sub models. New models are able to fully and accurately reflect SiC MOSFET’s static and dynamic characteristics. Moreover, it provides an important foundation for switch process analysis of SC MOSFET, loss calculation and main circuit design. The fact that the experimental testing result is highly coincident with the simulation results verifies the correctness and accuracy of the models.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

1391-1395

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.1391

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Online since:

July 2014

Authors:

Yong Long Peng*, Rong Rong Li, Ya Bin Li

Keywords:

Dynamic Analysis, Pspice Modeling, SiC MOSFET, Simulation, Static Analysis

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* - Corresponding Author

References

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