Investigation of TSV Induced Thermo-Mechanical Stress: Implementation of Piezoresistive Sensors and Correlation with Simulation

Komi Atchou Ewuame; Vincent Fiori; Karim Inal; Pierre-Olivier Bouchard; Sebastien Gallois-Garreignot; Sylvain Lionti; Clement Tavernier; Herve Jaouen

doi:10.4028/www.scientific.net/AMR.996.975

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Microstresses in ZrO₂ Layer and Lateral Cracking
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Microstructural Evolution and Strain Development in Metal Matrix Composites
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Internal Stresses in Metal Matrix Composites in Relation with Matrix Phase Transformations
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Residual Stress Evaluation of Short-Fiber Reinforced Plastics by X-Ray Diffraction
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Influence of Hydrothermal Ageing on the Residual Stresses and Mechanical Behavior of Carbon/Epoxy Composite Laminates
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Comparison between Conventional Shot Peening (SP) and Surface Mechanical Attrition Treatment (SMAT) on a Titanium Alloy
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Non-Destructive Residual Stress Investigations of Natural Polycrystalline Diamonds
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Investigation of TSV Induced Thermo-Mechanical Stress: Implementation of Piezoresistive Sensors and Correlation with Simulation
p.975

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 996Investigation of TSV Induced Thermo-Mechanical...

Investigation of TSV Induced Thermo-Mechanical Stress: Implementation of Piezoresistive Sensors and Correlation with Simulation

Abstract:

This work deals with a methodology to evaluate residual stresses within microelectronic devices by using MOS (Metal Oxide Semiconductor) rosette stress sensors. The stress tensor was evaluated by carrying out electrical measurements on test vehicle: the bridge from electrical to stress values was ensured by the piezoresistive relations and, prior to further in-house calibration, coefficients from literature were employed. For correlation purpose, numerical simulations were performed in order to evaluate stresses induced by TSV (Through Silicon Via). In this paper, the whole framework is described, and stress fields evaluated from in-situ electrical measurements on CMOS65 rosette sensor are compared to simulated ones. Some of the ultimate targets of this work are to develop a validated framework to deeply understand TSV induced thermo-mechanical stresses and to allow design rules definitions for products reliability and transistor performances.

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Periodical:

Advanced Materials Research (Volume 996)

Pages:

975-981

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.996.975

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Online since:

August 2014

Authors:

Komi Atchou Ewuame, Vincent Fiori, Karim Inal, Pierre-Olivier Bouchard, Sebastien Gallois-Garreignot, Sylvain Lionti, Clement Tavernier, Herve Jaouen

Keywords:

FEM Simulation, Piezoresistive Stress Sensor, Residual Stress, Thermomechanics, TSV

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